As a senior device modeling engineer working with Raytheon?s GaAs and GaN technologies you will be responsible for the generation of active and passive models for products being developed in our III-V semiconductor foundry. These models will then be used by Raytheon?s MMIC Design team to create Monolithic Microwave Integrated Circuits (MMICs) for use in both commercial and defense electronic systems.
Responsibilities will include some or all of the following:
Design and layout of device modeling test structures and chips
Evaluation, use, and support of measurement and parameter extraction hardware and software
Execution of device characterization test plans including static & pulsed I-V, C-V, CW & pulsed bias S-Parameter, load/source-pull, TOI, and noise measurements
Analyzing parametric test data, collecting and analyzing modeling device data, and extracting device models
Developing advanced device model formulations and model extraction algorithms
Releasing models into MMIC Process Design Kits (PDKs) in Keysight ADS, and publishing device model documentation and foundry design manuals
Assisting device and process engineers in analyzing and understanding the detailed performance of various semiconductor active and passive devices through direct measurement
Assisting EDA engineers in developing and testing MMIC PDKs in Keysight ADS
4+ years of experience in compound semiconductor HEMT modeling
Hands-on experience with compound semiconductor device characterization (measurement setup and execution) such as static & pulsed I-V, C-V, CW & pulsed bias S-Parameter, load/source-pull, TOI, and noise measurements
Hands-on experience with high-frequency (microwave/millimeter wave) and large-signal/high power test equipment such as Keysight or Anteverta NVNAs
Experience using statistical data analysis tools such as MatLab, JMP or Excel
Experience with scripting languages in a Linux environment
Microwave, digital and/or analog circuit basics; previous exposure to power amplifier, low-noise amplifier, and related circuits
Experience with the following:
Semiconductor device physics concepts with emphasis on compound semiconductor HEMTs
Basic network theory
Lumped element equivalent-circuit models for high-frequency transistor devices
Non-linear compact model parameter extraction and validation techniques
Understanding of integrated circuit manufacturing processes and concepts
Direct experience with the Verilog-A behavioral modeling language and its use for compact model development
Direct experience with setup/development/use of Agilent IC-CAP, other commercial, and/or custom measurement and parameter extraction software
Familiar with transistor models such as Angelov, EEHEMT, BSIM4, PSP, etc.
Experience with a wide range of semiconductor device technologies including Compound Semiconductor HEMTs and HBTs, CMOS/RFCMOS and SiGe BiCMOS
Experience with Perl/Python/etc. scripting languages
Experience with project management including project planning, task break down, milestone scheduling, etc.
Working knowledge of Keysight ADS
Excellent communication skills
Ability to obtain a Security Clearance
Background in III-V compound semiconductors
BS in Electrical Engineering or Applied Physics or other related engineering degree
This position can be a Salary Grade Engineer G08 or G09 based on the candidate?s qualifications as they relate to the skills, experience and responsibility requirements for the position.
Bachelor of Science in Electrical Engineering, Computer Engineering or related discipline This position requires the eligibility to obtain a security clearance. Except in rare circumstances, only U.S. citizens are eligible for a security clearance.
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