Kellogg Brown & Root (www.kbrjobs.com)
At KBR, We Deliver by transforming science into new possibilities for our customers. Be part of a multi-disciplinary team of engineers and researchers to discover and develop new and relevant military-critical electronics to maintain our nation’s air, space, and cyber superiority.
This position is located at the Air Force Research Laboratory Sensors Directorate, Aerospace Components and Subsystems Tech Division, Optoelectronics Technology Branch. The Optoelectronic Technology Branch performs basic and applied research to discover and develop novel optoelectronic, laser, and power electronic concepts through the exploitation of structure-property interactions to ensure continued USAF sensor and countermeasure technology dominance.
KBR is seeking a physicist with specialization in condensed matter physics and topological materials for the investigation of light-matter interactions in optoelectronic devices composed of topological materials and/or structures. The project primarily involves the measurement and analysis of the circular photogalvanic effect (CPGE) under different applied electric and magnetic fields. The selected physicist will assist in the design, assembly, and operation of experimental measurement apparatus to measure CPGE-generated current in materials and devices. Highly sensitive measurements on the order of picoamperes are expected. The selected physicist will make device design recommendations based on the intended applications (to be revealed upon interview). He/she will develop and apply the necessary theoretical models to analyze data and to make recommendations for the change of the device design or the measurement system to achieve desired performance.
The ideal candidate will have previously conducted research with topological materials (e.g. topological insulators and Weyl semimetals) with experience in the operation of measurement equipment, such as picoammeter, source measuring units, closed-cycle cryostat, and superconducting magnets. The candidate should have an in-depth technical understanding of concepts related to topological materials, such as Berry phase, Chern numbers, Z2 invariants, time-reversal inversion symmetry, etc. and how they manifest in physical properties of solids or device structures, such as topological surface/edge states, spin-momentum locked electronic states, spin-polarized currents, and Floquet-Bloch states. The candidate should be able to calculate or evaluate the calculation of electronic band-diagrams of topological materials and device structures under various environmental and operating conditions.
This position is located at the Air Force Research Laboratory, Sensor Directorate, Wright Patterson AFB, OH.
Scheduled Weekly Hours:40
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